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ATMI and IBM team on new chemistries for highly implanted resist strip |
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Dec 04, 2007 at 06:26 PM |
 ATMI and IBM have entered into a joint development agreement to make new chemical formulations for highly implanted photoresist strip applications at the 45nm node through to the 22nm node. The joint development activities will take place at ATMI's headquarters and laboratories in Danbury, Connecticut and at IBM's Watson Research Center in Yorktown Heights, New York.
"IBM believes that process and material improvements will make a significant contribution to the future of the semiconductor industry," said Dr. Ronald D. Goldblatt, Distinguished Engineer and Senior Manager, IBM Research. "Our joint development work combines our strengths in developing successful materials solutions for leading edge device applications." "New materials are driving integrated circuit performance," said Tod Higinbotham, Executive Vice President, Process Solutions for ATMI. "Our collaboration with IBM will benefit both companies as we seek to create and commercialize next-generation materials and leading-edge semiconductor processes for ever-more-powerful devices. We are
addressing specific materials issues that are plaguing the semiconductor industry worldwide today-and those that will become obstacles in the future."
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Materials & Gases 
