Product Briefing Outline: Applied Materials has introduced its new Applied ‘FullVision’ system that enables real-time control of dielectric CMP processes for the 45nm node and beyond.  The FullVision system couples Applied's patented window-in-pad technology with multiple-wavelength spectroscopy to deliver advanced in situ endpoint capability for a variety of dielectric materials, including oxide, STI and poly CMP applications. The FullVision system has already been adopted by major memory customers on their Applied ‘Reflexion’ LK CMP systems in high volume manufacturing, the company said. 

Problem: As films become thinner, CMP becomes increasingly difficult, requiring much more precise wafer-to-wafer process control to achieve acceptable yields. Using broadband spectral analysis, FullVision technology monitors individual polishing zones
across the wafer that are claimed to provide twice the accuracy and repeatability of competitive systems on a wide variety of process steps – without compromising throughput.

Solution: The Applied Reflexion LK CMP system implements a full suite of endpoint methods, in-line metrology and advanced process control capabilities. Its patented window-in-pad technology enables real-time polish control of every wafer without compromising throughput. The new FullVision in-situ endpoint system, for all stop-in and stop-on dielectric applications, uses broadband spectroscopy to significantly improve Cpk and minimize wafer scrap caused by drifts in consumable sets and incoming wafer variations. The system demonstrates high repeatability across all applications with less than 150 angstrom, 3-sigma endpoint accuracy on patterned wafers. A major advance over single wavelength endpoint technologies, the FullVision system offers improved measurement accuracy with a claimed 50 percent higher reliability for dielectric applications.

Applications: Oxide, STI and poly CMP.

Platform: Applied Reflexion LK CMP system uses a 4-head/3-platen architecture.

Availability: November 2007 onwards.