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Chartered extends R&D pact with IBM to cover 22nm bulk CMOS
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Chartered Semiconductor will now collaborate with IBM on 22nm bulk
CMOS R&D at IBM’s 300mm fab in East Fishkill, N.Y. The companies
had previously partnered on 90nm, 65nm, 45nm and 32nm process
development.
“This news demonstrates that a long-term collaborative model for
semiconductor research and development yields significant opportunities
to improve application performance and cost,” said Gary Patton, Vice
President, IBM Semiconductor Research & Development Center. “Going
forward, it will be material science invention that will improve
silicon performance while the collaborative model mitigates the
escalating cost of technology and design and improves time to
manufacture.”
“Our relationship with IBM and our flexible
Common Platform access provides Chartered’s customers an assured
process roadmap that leverages IBM’s technology invention in silicon
that is first proven in manufacturing at the Albany Nanotechnology
Center and then becomes the basis for our joint process integration
with our partners,” said Liang-Choo “LC” Hsia, Senior Vice President of
technology development at Chartered. “At a time when our customers are
just gaining access to the most innovative foundry process in the
industry at 32nm, we can now assure them continued customer-centric
solutions well into the next decade with 22nm.”
Financial details were not disclosed.