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Remote plasma source maximizes process development flexibility |
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Oct 08, 2004 at 07:00 PM |
 Product Briefing Outline: Advanced Energy Industries, has
unveiled its next-generation "Litmas RPS 1501" linear-inductive remote
plasma source for advanced thin-film processes. Especially well-suited
for wafer pre-clean, photoresist strip, gate dielectric deposition and
atomic layer deposition (ALD) applications, the Litmas RPS 1501 also
facilitates the development of a wide variety of other advanced process
applications.
Problem: AE's Litmas RPS 1501 is the only fully integrated,
remote, inductive plasma source and power delivery system available in
a high-conductance, lowsurface- area, linear geometry. The platform's
solid-state power-matching design delivers up to 1.5 kW of stable
radio-frequency (RF) power in less than 3 milliseconds, enabling faster
changing processes, reducing process variability and improving yields
for advanced sub-90 nm and 300 mm applications. Moreover, its extremely
low source-to-source variability enhances end-user process development
and yields.
Solution: Using the patented LitmasMatch topology to couple the
2 MHz power from the field-effect transistors (FETs) of the power
amplifier circuit, the Litmas RPS design delivers RF power in an
inherently more efficient manner than traditional RF plasma systems
that convert power through a 50-ohm cable. The feedback and control
circuit utilized in the LitmasMatch topology allows the platform to
dynamically adjust the timing of the FETs to maintain proper operation
even as plasma loads vary substantially and rapidly with changes in
pressure, power or chemistry. Further, the source chamber, which is
available in both low-recombination quartz and durable alumina
configurations, uses a patented, ringing-coil antenna design that
maximizes ignition in multiple chemistries.
Applications: In wafer pre-clean applications, the Litmas RPS
utilizes a confined plasma to generate reactive gases that gently
remove hydrocarbons,water vapor, native oxides,and other undesirable
substances from the wafer surface. Eliminating these contaminants,
which can induce point or film property defects, should result in
higher yields. With dry strip (ashing) processes, etch species produced
in the Litmas RPS chemically react with photoresist on the wafer
surface to produce volatile etch products.Unlike in-situ photoresist
strip sources, the remote Litmas RPS source eliminates any ion charging
damage that could reduce device yields. In thin-film deposition
applications, such as PEALD,PECVD,and PEPVD, the Litmas RPS helps
precisely and rapidly deposit ultra-thin, low-defect, high-k dielectric
or liner/ barrier films on the wafer surface. By utilizing a remote
plasma to pre -dissociate active chemical species, can optimize film
properties and deposition rates.
Platform: The new Litmas RPS 1501 is a high-performance addition to AE's portfolio of remote plasma sources.
Availability: 2004 onwards.
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Product Briefings 