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Skyworks converts GaAs HBT wafer fab |
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Oct 25, 2007 at 02:30 PM |
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 Due to growing demand for its high performance analog and mixed-signal semiconductors, Skyworks Solutions has started the conversion of its internal gallium arsenide heterojunction bipolar transistor (HBT) fabrication facility in Newbury Park, California, from 4- to 6-inch wafers as well as expanding partnerships with several leading Taiwanese foundries.
“With continued strong mobile phone growth forecasted for the foreseeable future, increasing GaAs content per handset, and traction within our Linear Products portfolio, we are implementing a hybrid capacity expansion model to maximize our internal capabilities while at the same time leveraging external partnerships,” said Bruce Freyman (pictured), Vice President of worldwide operations at Skyworks. “While we will continue to invest internally, our balanced approach is less capital intensive and more flexible, allowing us to meet customer demand without compromising gross margin or other key operating metrics. These initiatives position Skyworks to support well over $1 billion in annual compound semiconductor revenue.”
Skyworks is collaborating with several foundries in Taiwan to complement its Newbury Park, California facility that develops GaAs HBT power amplifiers, and its Woburn, Massachusetts fab that produces PHEMT switches. Skyworks has exported “copy exact” processes of mature GaAs technology to these foundries, the company said.
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