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EUV light sources featuured in journal of Physics |
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Feb 04, 2005 at 12:00 PM |
Adetailed review of the status of high power EUV plasma sources for
semiconductor manufacturing has been published in Volume 37 Issue 23 of
Journal of Physics D: Applied Physics (J. Phys. D).
Guest Editor Professor David Attwood (University of California,
Berkeley; Lawrence Berkeley National Laboratory) writes in his
Editorial, ‘The International Technology Roadmap for Semiconductors
provides industry expectations for high volume computer chip
fabrication a decade into the future."
"While the roadmap provides a collective projection of what
international industry expects to produce, it does not specify the
technology that will be employed...The leading candidate for the 2009
node is extreme ultraviolet (EUV) lithography; however this requires
that several remaining challenges, including sufficient EUV source
power, be overcome in a timely manner."
Together, the cluster of eight papers addresses the critical issue of
available EUV power from electrical discharge pinch plasmas and laser
produced plasmas, including the roots of these requirements, the
relevant plasma and radiation physics, and current state-of-the-art
commercial technology.
As a service to the applied physics community, all eight articles will
be freely available online until the end of February 2005 and to
institutional subscribers following this date.
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Lithography 
