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Dow Corning to supply CVD precursor |
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Feb 04, 2005 at 09:00 AM |
Dow Corning Corporation will begin supplying its Z3MS CVD Precursor
(trimethylsilane) through non-exclusive distribution arrangements with
a number of key gas distributors to the semiconductor industry. The new
distribution model will become effective as of January, 2005.
"Many IC manufacturers and equipment suppliers have asked us to pursue
a more open distribution model for our CVD precursors," said Tom Cook,
global electronics industry director, Dow Corning. "We listened to
their needs and decided that a nonexclusive model was best over the
long term. This model ensures that Z3MS will be readily available from
multiple sources for the foreseeable future, allowing end users to
choose the supply option that best fits their needs."
Dow Corning has made substantial investments in the synthesis,
purification and supply of trimethylsilane. "We currently have a
capacity of 50 metric tons per year for semiconductorgrade Z3MS, and
can easily scale this capacity to 100 metric tons per year," said Linda
McInally, Dow Corning supply chain director. "We believe that we have
the lowest manufacturing cost, and expect our existing capacity will
sufficiently meet the entire industry's projected needs for
trimethylsilane at the 90nm and 65nm technology nodes."
Dow Corning pioneered the use of Z3MS trimethylsilane for depositing
low-k silicon oxycarbide, and silicon carbide metal barrier thin films
by CVD, and holds a number of key patents in this area. Z3MS is widely
used today by leading IC manufacturers for low-k dielectric and metal
barrier films at the 90nm technology node.
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