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Home arrow Wafer Processing arrow Articles arrow Edition 23 - Published July 2004 arrow 23rd Edition: High-k/metal gate trans...
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23rd Edition: High-k/metal gate transistor scaling and device concerns for advanced CMOS Print E-mail
Sep 21, 2004 at 12:19 PM

Mark Gardner, Sundar Gopalan & Jim Gutt, Advanced Micro Devices and Paul Kirsch & Siddarth Kirshnan, IBM and Jeff Peterson, Intel and Hong-Jyh Li, Infineon and Howard Huff, International SEMATECH

ABSTRACT

This article discusses the issues surrounding high-k metal gate transistors for advanced CMOS devices. This type of structure is essential to obtain future generations of devices.

 

23rd Edition: High-k/metal gate transistor scaling and device concerns for advanced CMOS device applications
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