|
The past week or so has seen several major developments in the realm of advanced microlithography.
Major conferences on immersion litho (IML) and extreme ultraviolet litho (EUVL) made news with the latest advancements in their respective disciplines, IMEC and ASML said they have demonstrated at least the feasibility of 32-nm hyper-NA IML using double patterning, and ASML also reported record earnings in its latest financials.
As if that were not enough, a market forecast from the Information Network says the litho space will grow more than 30% in 2006 and at least 8% in 2007, with the IML portion of the scanner market doubling in size to some $1.2 billion next year.
Papers delivered at the IML symposium recently held in Kyoto, Japan, showed "that 193i is on track for volume manufacturing at sub-65-nm half-pitch, and might be extensible below 40 nm half-pitch with techniques using high refractive index fluids and very high numerical aperture (NA). Five "key challenges" for deploying 193i below-40-nm half-pitch were also outlined:
- Development of high-index lens materials.
- Identification of high-index refractive fluids.
- Availability of effective photoresists (including leaching and high-index photoresists).
- Cost-effective development of double-exposure patterning.
- Attainment of low defectivity.
As if on cue, word came out that ASML and IMEC demonstrated at the Belgian research center's fab that a 193-nm IML stepper with a 1.2 NA can make ICs at the 32-nm half pitch, through the use of double patterning. The results lend credence to those who believe that this approach could help IML extend to the 32-nm generation and thus further postpone EUVL as a volume production choice for another node, and that the use of an immersion fluid with a higher refraction index than water may not be necessary as soon as previously believed.
IMEC says that future double-patterning research "will focus on improving the overlay to make it a reproducible process," adding that the "extremely tight overlay requirements as well as the throughput/cost hit of having to go through two lithography and etch steps for a single device layer are among the disadvantages of double patterning."
Meanwhile, ASML's honchos seemed almost giddy in announcing their record-breaking third-quarter earnings call, topping the $1.2 billion mark in sales and $305 million in profits. Bookings also held strong, showing a 10% sequential increase. Of particular interest was the Dutch company's revelation that they have shipped 28 IML tools so far, including 15 Twinscan 1700i platforms capable of 45-nm volume production, as well as the first two full-field EUVL development systems.
Speaking of EUVL, the symosium concluded in Barcelona revealed advancements across the technological spectrum, from the delivery of the aforementioned ASML tools to IMEC and Albany Nanotech, to the meeting of all key specs on the optical train for those tools, to the scaling of the EUV laser source for commercial production staying on schedule, to similar upbeat news on the resist and mask fronts.
With IML likely to be extendible to at least 32 nm and EUVL showing it might be ready for 32 nm as well, the industry will soon have to make up its mind which path to pursue--or if continuing with a two-solution approach is both feasible and affordable. Lithography technology has made some amazing leaps and bounds over the past five years, but the cost and roadmap pressures of putting significant resources into two separate technology paths may soon build to the boiling point.
|
Blogs 
