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Low temperature silicon nitride process |
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Feb 04, 2005 at 06:00 PM |
 Product Briefing Outline: Aviza
Technology, has introduced "Satin," a low
pressure chemical vapor deposition (LPCVD)
process for depositing silicon nitride (SiN) at
approximately 500 degrees C, an important capability for
sub-90 nm semiconductor manufacturing. Satin's unique
chemical characteristics, coupled with Aviza Technology's
RVP-500 platform, achieve the thermal budget
requirements for 90 nm and below device features, the
company claims. The RVP-500 combines the advantages
of the reduced cycle times offered by single wafer tools
and the lower cost of ownership (CoO) associated with
batch furnaces.
Problem: Sub-90 nm DRAM, flash, NAND and NOR devices are facing severe
demands for lower thermal budgets due to presence of advanced metal
gates, nickel silicide and shallow junctions. The traditional
dichlorosilane (DCS) ammonia (NH3) process for silicon nitride film
deposition temperatures requires temperatures above 630 degrees C.
Newer bis tertiarybutylamino silane (BTBAS) / NH3 process temperatures
are at 570 degrees C or above. Both of these current processes
inherently restrict ability to meet today's modern thermal budget,
contamination and reduced plasma damage requirements for sub-90 nm film
formation.
Solution: The Satin process incorporates a proprietary precursor that
eliminates the problems of chlorine (Cl) or carbon contamination in the
SiN film and potential plasma damage. Air Liquide supplied the
precursor material and worked with Aviza Technology to jointly develop
the process.
Applications: (LPCVD) process for depositing silicon nitride (SiN) for 90nm devices & below.
Platform: Satin was developed specifically for implementation on our
RVP-500 platform. Lower chemical consumption rates to reduce process
cost, cross flow capability and the flexibility to run variable load
sizes up to 50 wafers are now claimed.
Availability: November 2004 onwards.
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