|
Cost-effective thin films control at the 65nm node |
|
|
|
Feb 04, 2005 at 10:00 PM |
 Product Briefing Outline: KLA-Tencor has unveiled the
SpectraFx 200, its most advanced, seventh-generation thin-film
metrology system. It is designed to achieve cost-effective production
control over advanced film processes at the 65nm node and below. Based
on its spectroscopic ellipsometry (SE) technology, SpectraFx 200
leverages a new 150 SE option to enable qualification and monitoring of
such advanced films as ultra-thin ONO layers, nitrided films, high-k
and low-k dielectrics, amongst others.
Problem: At the 65-nm node, process tolerances are so small that
within-die variation and airborne molecular contamination (AMC) can
have a major impact on device performance. New types of materials are
also being added that require new measurement parameters, such as
composition and film stress. Traditional proxy measurements, which
utilize blank pad structures, cannot detect these process variations at
the die level, and are thus no longer enough to meet the requirements
for production films control. SpectraFx 200 provides robust,
non-destructive measurements that more accurately reflect process
conditions at the die level, enabling chipmakers to achieve
cost-effective production films control for the 65-nm node and beyond.
Solution: With KLA-Tencor's DPM capability, SpectraFx 200 measures test
structures composed of alternating metal dielectric arrays, which
significantly improve correlation to within-die variations. These
patterned structures generate complex diffraction spectra, which are
then turned into accurate measurements using powerful onboard
algorithms. With its new 150 SE option, SpectraFx 200 enables
measurement in the "vacuum UV" (150-nm wavelength) accurately monitor
film thickness and composition variations on new materials such as
high-k films. On nitrided films and hafnium silicate gates a two-fold
improvement in repeatability and matching compared to 190-nm wavelength
scatterometry-based systems is being claimed. The system's AccuFilm
capability eliminates the effects of AMC. SpectraFx 200 also provides
enhanced 2-D and 3-D product wafer stress metrology-allowing users to
obtain wafer stress measurements that correlate to die-level stress
more accurately than traditional 1-D monitor wafer measurements,
thereby improving root cause analysis.
Applications: Advanced films such as ultra-thin ONO layers, nitrided
films, high-k and low-k dielectrics, 193- nm anti-reflective coating
(ARC) layers, and engineered substrates, including silicon-on-insulator
(SOI), strained silicon, and silicon germanium (SiGe).
Platform: All major optical components on the SpectraFx 200 have been
redesigned to lower spectral distortion. A faster computer and a
cleaner, faster frontend wafer-handler, combined with remote
diagnostics and iSupport for 300-mm automated fabs.
Availability: December 2004 onwards.
|
Wafer Processing 