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Home arrow Product Briefings arrow Lithography arrow Shrink assist resist
Shrink assist resist Print E-mail
Feb 04, 2005 at 09:00 PM
ImageProduct Briefing Outline: Tokyo Ohka Kogyo Co (TOK) has developed a process based on a new concept applying Shrink Assist Film for Enhanced Resolution (SAFIER). SAFIER makes possible microprocessing a generation ahead even while using today's exposure wavelengths, according to the company.

Problem: The production process window for 193nm ArF lithography image resolution and depth of focus (DOF) have become small enough to become a critical yield limiting factor. A chemical process that shrinks via hole and trenches would enable a larger process window for a given technology node, enabling better features and improving yields.

Solution: Utilizing the thermal contraction effect induced by heat treatment on SAFIER itself, the process simultaneously shrinks photoresist patterns while improving their configuration. With SAFIER, the photoresist patterns shrink while retaining pattern walls verticality. SAFIER undergoes thermal contraction at temperatures below the photoresist fluidization temperature, and therefore allows processing at lower temperatures than in the thermal flow process. Contraction rate does not fluctuate much with temperature variation, SAFIER offers improved controllability of this contraction rate. Even photoresist patterns with mutually different pitches (pattern intervals) exhibit little difference in respect of the contraction rate. Removal of SAFIER with pure water after shrinkage of the photoresist patterns.

Applications: SAFIER is applicable to a diversity of processes (i-line, KrF, ArF, Bi-layer, EB and F2).

Platform: A combination of polymer shrink chemistry with thermal flow.

Availability: September 2004 onwards.
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