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High productivity on high aspect ratio contract holes |
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Feb 04, 2005 at 10:00 PM |
 Product Briefing Outline: Soluris, a manufacturer of
CD-SEMs (Critical Dimension Scanning Electron Microscopes) for advanced
semiconductor manufacturing, has launched the new Yosemite SP-1000.
Measurement throughput as high as 1,000 sites per hour and clear
imaging at the bottom of high aspect ratio contact holes has been
claimed. The system retains Ultra Low Voltage and 3-D model-based
Critical Shape Metrology required at and below 65 nm.
Problem: The 65nm node is a critical inflection point on the
CD-SEM technology curve. The features we measure at this node are
comparable in size to the distance that standard voltage electrons
travel within the sample. Electron beam range in the sample must be
shortened to adapt to tomorrow's geometries. Conventional methods of
measuring 193nm resist slimming are not working. 100eV measurements
confirm that higher voltage can slim the resist by as much as 15nm
before the first measurement, according to the company.
Solution: Yosemite SP-1000 uses landing energies as low as
100eV, reducing electron range to less than onetenth that of a
conventional CD-SEM. 3-D model-based Critical Shape Metrology also
provides a much more accurate representation of the physical
shape of the feature than the intensity-based measurements of older
technologies. The method provides sidewall profile, feature height,
feature width, etc., with higher precision, without degrading the
sample or compromising system throughput performance. Feature width and
sidewall angle accuracy have been correlated through crosssection and
AFM analysis.
Applications: CD measurement of 193ArF photoresists.
Platform: Using three load port modules, Yosemite achieves
higher effective throughputs and expands productivity. 200mm/300mm or
150mm/200mm configurations with no hardware modifications are available.
Availability: December 2004 onwards.
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Lithography 
