|
Toshiba using Nikon’s S610C immersion tool for 43nm in Fab 3 in 2Q08 |
|
|
|
Oct 19, 2007 at 04:05 PM |
|
 Nikon has said that Toshiba will use its NSR-S610C (NA = 1.30) ArF immersion scanner for volume production of NAND flash starting at Toshiba’s 43nm node. Nikon claims that the S610C is the first immersion system capable of producing 45nm features for memory and 32nm features for logic devices.
“By being first to market with a 45nm production tool, we have enabled our customers to gain a clear competitive advantage,” stated Kazuo Ushida, President of the Nikon Precision Equipment Company. “In lithography, time to market is critical and we’ve proven our ability to bring production worthy tools to the market faster than the competition.”
Certain details of the deal were announced during the 4th International Symposium on Immersion Lithography held in Keystone, Colorado last week.
In a conference call with financial analysts yesterday, executives at SanDisk, Toshiba’s NAND flash manufacturing partner, said that Fab 3 would begin migration to 43nm production in the second quarter of 2008. Fab 4, which is just starting an aggressive ramp at the 56nm node, would begin conversion to 43nm as soon as 56nm yields had stabilized, indicating a migration in the second half of 2008.
|
News 
