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Home arrow News arrow Lithography arrow IMEC to receive EUV pre-production tool from ASML in 2010
IMEC to receive EUV pre-production tool from ASML in 2010 Print E-mail
Oct 17, 2007 at 05:21 PM

IMECIMEC has said that it has reached agreement with ASML to install its EUV pre-production pilot tool in IMEC’s 300mm facility in 2010. Currently, IMEC has one of the only ASML EUV Alpha tools in operation. The PPT system will be used to do 22nm CMOS process development and scale EUV technology up to production-worthy standards. 

IMEC also revealed that high-resolution images were obtained with an Sn source (Philips Extreme UV) at the end of September. The world’s first horizontal and vertical 35nm and 40nm lines and spaces in 100nm MET-2D resist (Rohm & Haas) at 18mJ/cm2 were successfully exposed with EUV using an Sn source.

"These results mark a cornerstone in the development of EUV lithography. They represent the first real data, building confidence for EUV to be a viable technology for 32nm half pitch lithography and below," said Luc Van den hove, Executive Vice President and Chief Operating Officer at IMEC. "We are very pleased that our strategic partnership with ASML continues more than ever with the installation of one of the early EUV pre-production tools. Such advanced tools and successful collaboration are indispensable assets for doing advanced research with the world’s leading memory suppliers, logic IDMs and foundries."

"IMEC’s ability to help semiconductor companies explore new technologies has made it a trusted partner for the industry. IMEC’s order for one of our production-worthy EUV lithography systems is another sign how semiconductor manufacturers are gearing up to use EUV for ever-smaller features on chips," said Martin van den Brink, Executive Vice President of marketing and technology at ASML. "Our roadmap shows that ASML’s EUV systems have the potential to expose more than 100 wafers per hour, which is well above the minimum required for cost effective EUV chip manufacturing."

IMEC

Caption: IMEC exposed 35nm and 40nm horizontal and vertical lines and spaces in 100nm MET-2D resist (Rohm & Haas) at 18mJ/cm2 using the ASML EUV alpha demo tool equipped with an Sn source (Philips Extreme UV).
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