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Toshiba demonstrates 18nm isolated and 24nm dense features using imprint lithography |
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Oct 16, 2007 at 01:02 PM |
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 Toshiba Semiconductor has presented a paper titled "Nanoimprint Applications Toward 2-nm Node CMOS Devices" at the 33rd International Conference on Micro- and Nano-Engineering (MNE) in Copenhagen, Denmark, which highlighted the ability to pattern 18nm isolated features and 24nm dense features using Molecular Imprints’ Imprio 250 imprint lithography system.
"We applaud this impressive accomplishment by Toshiba in pioneering next-generation CMOS manufacturing, and we are pleased by their decision to leverage our Imprio 250 system in their efforts," said Mark Melliar-Smith, CEO of Molecular Imprints. "Their results, along with similarly strong tool performance findings from another leading chip manufacturer, further confirm the performance of the Imprio 250. Unlike extreme ultraviolet lithography, our technology builds on the existing optical lithography infrastructure - helping to make it ideally suited for the economic production of very-high-density CMOS devices. We believe our advanced S-FIL technology is a viable solution for critical device layer applications at the 32nm node, and a superior solution at and beyond the 22nm node."
Toshiba also found that they were able to achieve <1nm critical dimension uniformity (CDU) and <2nm line edge roughness (LER). Defectivity levels of as low as <0.3 defects per cm2 were achieved, levels that are approaching those of immersion lithography.
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