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Barrier slurry for low-stress/low-pressure CMP |
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Feb 04, 2005 at 08:00 PM |
 Product Briefing Outline: Rohm and Haas Electronic
Materials CMP Technologies, a leader in polishing technology for the
global semiconductor industry, today introduced another new barrier
slurry optimized for low-stress/low-pressure chemical mechanical
planarization (CMP) of copper semiconductor devices. SSA Barrier
Slurry, targeted at 90nm and 65nm CMP, provides consistent performance,
excellent defectivity and a large processing window, leading to
improved yields and cost of ownership for low-k applications.
Customer-proven in both capped and uncapped integration schemes, SSA
Barrier Slurry minimizes microscratches, improves sheet resistance, and
lowers overall defect counts versus conventional slurries.
Problem: High barrier removal rates at low pressure (1.5 psi)
provide high and balanced throughput while minimizing film stress or
delamination. The unique attributes of SSA Barrier Slurry address the
growing requirements within the copper CMP industry for products and
processes that can polish unique and varied combinations of barrier,
cap/ARC (anti-reflective coating), and fragile low-k dielectric films
quickly, gently and repeatedly, while minimizing feature topography and
defectivity.
Solution: SSA Barrier Slurry is claimed to be the first slurry
to attain tantalum and TEOS (tetraethylorthosilicate) rates above
500A/min at low pH, low wt% particles and very small particles while
operating at 1.5 psi. This enables end-users to quickly remove various
barrier and dielectric films in a gentle CMP process that protects the
integrity of the fragile film stack while maximizing throughput, and
minimizing topography, oxide loss and defectivity. The acidic pH of SSA
Barrier Slurry also allows for a compatible and secure transition
between acidic bulk copper CMP slurries and SSA on single-platen CMP
platforms. For capped integration schemes, significant reduction in
topography can be achieved during the barrier removal step without the
compromise of high dielectric loss.
Applications: 90nm and 65nm CMP processes. Platform: Since
removal rates are similar in both 200mm and 300mm processes, customers
can easily scale processes with SSA Barrier Slurry between platforms.
Additionally, SSA is compatible with our full line of pads: "IC1000,"
"Politex" and latest generation pads.
Availability: November 2004 onwards.
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Product Briefings 
