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Toppan Photomasks joins CEA-Leti led double patterning consortium |
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Sep 18, 2007 at 07:16 PM |
 Toppan Toppan Photomasks has signed a joint development agreement with CEA-Leti to explore double patterning techniques for 193nm ArF lithography.
“Understanding the challenges of double patterning such as CD and placement control and the additional requirements this technology places on mask manufacturing is key to successfully implementing a double patterning strategy for our customers,” said Franklin Kalk, Executive Vice President and Chief Technology Officer of Toppan Photomasks. “Our partnership with CEA-Leti combines our OPC models, OPC application to patterns and advanced mask manufacturing with a leading-edge research institute’s proven expertise to assure that photomask technology for double patterning is available when our customers are ready for it.” “This partnership with Toppan is a critical part of our consortium’s efforts to develop all aspects of double patterning and it underscores our commitment to work with leading global technology companies to provide chipmakers with superior advanced lithography technology,” said Olivier Demolliens, head of the Nanotec Division at CEA-Leti. The photomask fabrication and analysis work will be done at Toppan’s facility in Dresden, Germany.
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