Home
News
Blogs
Fabtech Jobs
Product Briefings
Going Places
300mm Activity Reports
Core Sections
Wafer Processing
Lithography
Fab management
Materials & Gases
Critical Components
Cleanroom
EHS
 
Find

GlobalSpec - The Engineering Search Engine
 
Home arrow News arrow Lithography arrow MAPPER Lithography first to demonstrate massively parallel electron beam writing
MAPPER Lithography first to demonstrate massively parallel electron beam writing Print E-mail
Sep 14, 2007 at 11:26 AM

MAPPERMAPPER Lithography has claimed that an important milestone has been reached in its development of e-beam lithography tools with the demonstration of massively parallel writing capability. 

The company said it had been able to show 45nm dense patterns (32nm node) in resist with multiple parallel electron beams from its demonstrator machine.

“This achievement is a significant breakthrough,” stated Dr. Burn Lin, Senior Director of TSMC’s lithography division. “This proves the multi-beam resolution capability of MAPPER's low voltage approach. We will continue to explore the viability of using MAPPER's technology for our advanced manufacturing processes.”

MAPPER’s e-beam tool technology is based on the use of light to switch the electron beams individually and the use of MEMS lens arrays to focus the parallel electron beams accurately.

Although e-beam tools have been used for protoyping and R&D applications, the slow write times compared to conventional optical lithography have prevented the technology being adopted for volume production applications.

However, TSMC and in particular Dr. Burn Lin have championed the need to seek productivity improvements in e-beam tools which could potentially replace or supplement EUV in an effort to control accelerating manufacturing costs at or below the 22nm node, should immersion lithography prove difficult to extend.
Readers' comments
Comment by flipsu5 on 2007-10-08 09:36:53
EUV is a bust. Double patterning is the only game in town.
Comment by niekgo on 2007-09-17 14:02:37
Let's not forget that this 'milestone' means only 100 parallel beams on a 20mm wafer. 
Now Mapper have to find a way (and money) to construct a tool with 10,000 parallel beams on a 300mm wafer. 
I think by the time such a tool will be ready, EUV on 22nm will be running on mass production.



Bookmark with:
DeliciousDiggredditStumbleUpon

Visit Fabtech Jobs websiteSubscribe to Fabtech weekly newsletter

Related articles
IBM process partners test 32nm high-k metal gate technology  (14/04/2008)
Toshiba uses Brion’s Tachyon OPC+ for 45nm logic devices  (21/02/2008)
CNT in Dresden to use e-beam system from Vistec for 32nm IC R&D  (15/06/2007)
New Product: JEOL’s JBX-6300FS direct write system offers 22nm imaging flexibility  (24/05/2006)
New Product: JEOL’s JBX-6300FS direct write system offers 22nm imaging flexibility  (24/05/2006)

Related jobs
Systems Engineer  (Camarillo, 25/06/2008)
Software Development Engineer  (Silicon Valley , 14/09/2007)
Lead Mechanical Engineer  (Peabody, 10/08/2007)
Algorithm Development Engineer  (Santa Clara, 09/08/2007)
Senior Algorithm Development Engineer  (Santa Clara, 09/08/2007)
Download
Subscribe
300mm