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High-performance CMP slurry for STI |
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Feb 04, 2005 at 11:00 PM |
 Product Briefing Outline: Hitachi Chemical Co.,has recently
developed a highperformance CMP slurry product for STI (Shallow Trench
Isolation) that can decrease scratches from polishing by two-thirds and
provide a twofold increase of surface flatness over existing products.
The company has decided to launch the new product in fullscale
production and sales starting January 2005.
Problem: Shallow Trench Isolation (STI) is one of the element isolation
methods that electrically isolate the millions of semiconductor devices
on a silicon wafer from each other. STI has become the major
method when a design rule around 180 nanometers has prevailed because
it is suitable for finer wiring, but it requires planarization with CMP
because it causes differences in level in the circuit forming process.
As polishing scratches caused by CMP aggravate process yields, however,
they must be further reduced to develop design rules for finer wiring
of 110 nanometers, 90 nanometers, etc.
Solution: The company has recently developed a highperformance CMP
slurry product that is capable of achieving a two-thirds decrease in
polishing scratches and a twofold increase in flatness over the
existing levels in the CMP process while maintaining the current
polishing speed. We produced a CMP slurry product that adopted cerium
oxide (CeO2) particles in 1998 and gained a high reputation for
products for STI thatrequired the highest flatness with fewer polishing
scratches and faster polishing speeds as their advantage. This
high-performance development decreases the size of cerium oxide (CeO2)
particles by up to 60 % compared to those of existing products.
Applications: Shallow Trench Isolation.Platform: A decrease in the size
of cerium oxide (CeO2) particles by up to 60 % compared to those of
existing products. High removal rate at low slurry content (CeO2:1%).
High selectivity between SiO2 and Si3N4.
Availability: January 2005 onwards.
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Product Briefings 
