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Toshiba’s Fab 4 to start volume NAND production in December |
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Sep 04, 2007 at 04:22 PM |
 The Joint Venture NAND flash memory operations of Toshiba and SanDisk have said that the world's largest 300mm fab will start volume production in December 2007. Fab 4 has now been officially opened with a first phase ramp target of 80,000 wafer starts per month (wspm) employing 56nm technology by the second half of 2008.
"Fab 4 will feature world-class manufacturing capabilities, both in scale and productivity," said Mr. Shozo Saito, Corporate Senior Vice President of Toshiba Corporation and President & CEO of Toshiba's Semiconductor Company. "It will support us in reinforcing our leadership in the fast growing global market for higher density NAND flash memories, and provide a powerful engine of growth for both companies."
"Fab 4 is testimony to the success of the great partnership and long-term commitment between Toshiba and SanDisk," said Dr. Eli Harari, Chief Executive Officer and Chairman of SanDisk Corporation. "The enormous size and technology scope of Fab 4 reflect our confidence and optimism for the future, and we believe will enable us to competitively meet the growing demand for flash storage from our global customers in the years ahead."
With an official capacity of 210,000wspm, Fab 4 is currently the largest 300mm fab so far built and entering production. The building area is approximately 35,500m2 and has been completed in 12 months.
Toshiba funded construction of the Fab 4 building, while Flash Alliance, Ltd. is funding the advanced manufacturing equipment now being installed in the fab. Flash Alliance, a Toshiba-SanDisk venture established in July 2006, is 50.1 percent owned by Toshiba and 49.9 percent owned by SanDisk.
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