Noted for its challenges in scaling below the 65nm node, conventional MRAM (Magnetic Random Access Memory) technology looked doomed to the tech-history books. However, the development of Spin-Transfer Torque Writing Technology (STT-RAM) holds promise at the 65nm node and below which promises to harness the spin momentum transfer effect for more compact memory cells.

"This collaborative initiative reinforces IBM's commitment to explore new phenomena for memory applications," said Dr. T.C. Chen, Vice President, Science and Technology, IBM Research. "The project will focus on creating and demonstrating advanced magnetic materials in demanding memory chip designs."

"This joint research and development will broaden the application of magnetic materials which has been TDK's core technology since 1935," said Mr. Minoru Takahashi, CTO, TDK Corporation.

STT-RAM has key initial markets replacing embedded technologies such as eSRAM, eFlash and DRAM, according to Grandis, a Silicon Valley start-up that is known to be working on commercializing STT-RAM technology as well as Spintec in Grenoble, France.

The new joint research between IBM and TDK will be conducted at IBM's TJ Watson Research Center in Yorktown Heights, NY; IBM's Almaden Research Center in San Jose, CA; IBM's ASIC Design Center in Burlington, VT; and TDK's subsidiary R&D Center in Milpitas, CA.