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R. SINGH, V. PARIHAR, K. F. POOLE, Clemson University, Clemson, SC, USA
K. RAJKANAN, KLA- Tencor Corporation, Miltipas, CA, USA ABSTRACT
Continued
reduction of feature size, significant improvement in the functionality
of new semiconductor products and simultaneously maintaining the
historical rate of cost reduction of new products are the three most
important challenges faced by the semiconductor industry in the 21st
century. From a process integration point of view, the introduction of
new materials (e.g. copper as conductor, as well as high and low k
dielectrics) will be the most difficult challenge for semiconductor
manufacturing in the 21st century. In a paradigm shift, understanding
the role of defects and how they affect yield will be as important as
the introduction of SPC was in leading to increased yield, some years
ago.
The ability to detect the important yield reducing defects in a
particular step will be vital. In this paper, we have focused on the
major issues related to p rocess integration (e.g. introduction of new
materials, new processes, new tools, etc.), new understanding of
defects that can lead to the development of sub 100 nm silicon ICs. In
this paper, we have provided an overview of the main issues related to
process integration, defects, and lithography.
Article coming soon.
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Wafer Processing 
