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Product Briefing Outline: ASML has introduced a new KrF lithography system that is claimed to significantly reduce operating costs for its customers. The ASML TWINSCAN XT:1000 scanner has a numerical aperture (NA) of 0.93 that can resolve 80nm device features, far smaller than the 100nm of today's KrF systems, therefore extending cost-efficient KrF technology to resolutions that previously required more expensive ArF technology. ASML claims savings of 30 percent or more per layer as a result of lower operating costs for KrF technology, particularly from cheaper lasers and lower materials cost such as KrF resists.

Problem: A typical chip consists of up to 30 or 40 layers. ArF and KrF systems are used to image the critical layers (smallest features) and mid-critical layers (slightly larger features), respectively. Remaining (non-critical) features are imaged using an i-Line light source with a wavelength of 365-nm. Improving the extendibility of KrF allows more layers to be imaged using the lower cost 248nm DUV wavelength instead of ArF at resolutions previously occupied by the more expensive wavelength systems.

Solution: The XT:1000's high numerical aperture (NA) of 0.93 can resolve 80nm device features, far smaller than the 100nm of today's KrF systems. The XT:1000 has an increased throughput of 165 300mm wafers per hour under volume manufacturing conditions while maintaining 6nm overlay, the same as leading-edge ArF systems. This results in a claimed cost saving of 30 percent or more per layer.

Applications: The XT:1000's high numerical aperture (NA) of 0.93 can resolve 80nm feature sizes.

Platform: The TWINSCAN platform's unique dual-stage design was launched seven years ago, which allows for non-stop parallel processing: measuring one wafer while imaging another.

Availability: ASML expects to begin shipping the XT:1000 by mid-2008.