 Product Briefing Outline: Nikon has launched the NSR-S310F 193nm ArF ‘dry' lithography scanner with projection optics at (0.92 NA) that combines technology advancements from leading-edge dry and immersion systems to provide a high productivity dry ArF scanner for critical applications at the 65nm node and below. The system uses Nikon Tandem Stage technology to increase throughput, improve overlay accuracy, and enhance long-term stability. With the throughput increased to 174 wafers per hour - a 20% increase over the previous generation Nikon scanner - cost of ownership is significantly reduced, according to the company. The Tandem Stage has also helped reduce overlay to 7nm.
Problem: As the cost of advanced lithography continues to cause concern, especially with the need to use immersion lithography at the 65nm node and below the need to provide cost effective critical layer imaging using ‘dry' ArF lithography with improved productivity and lower cost of ownership has become a key requirement for many consumer driven chip manufacturers. Solution: The S310F features the proven Nikon 0.92 numerical aperture projection lens and an increased maximum sigma to deliver resolution of 65nm or better, with optimal CD uniformity, and enhanced resolution and depth of focus using fourth generation POLANO. The S310F uses mature Nikon POLANO polarization technology to control the polarization direction without a loss of power and maintain the degree of polarization in the illumination homogenizer. POLANO enhances image contrast and reduces mask error factor (MEF) without any loss of illumination power or throughput, and superior overlay accuracy (≤ 7nm). NSR-S310F throughput was improved by 20% over the previous generation system. This is made possible by increased wafer stage speed (600mm/sec), a faster reticle stage, and reduced alignment time. Together with improved uptime, ease of maintenance, and the extensive use of auto-calibration functions, the S310F delivers lower cost of ownership compared to ArF scanners from other manufacturers, according to the company. Applications: 65nm features and below for critical layers using ‘dry' ArF. Platform: The S310F adopts the same platform as the NSR-S610C immersion scanner, using the Tandem Stage to provide superior performance with excellent cost of ownership. This high productivity platform enables the NSR-S310F to deliver throughput ≥ 174 wafers per hour. Availability: July 2007 onwards. Caption: Nikon's new Tandem wafer stage with a speed of 600 mm/sec. 
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Lithography 
