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Hynix makes significant cuts in DRAM and NAND flash production
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Hynix Semiconductor is escalating its closure of 200mm fabs that have been producing both DRAM and NAND flash memory devises in an effort to significantly reduce output on uncompetitive 200mm wafers, while shifting production to 300mm fabs. Hynix expects the move will reduce overall production of DRAM by 20 percent and NAND flash by as much as 40 percent.
The Korean memory manufacturer had previously announced the closure of three 200mm fabs, HC1, E1 and M9. However, M7, a 200mm fab in Icheon, Korea will also be shuttered by the end of September, 2008. M7 had been dedicated to DRAM production and marks 4 200mm fab closures out of 5 200mm fabs Hynix operates.
Fab M8, the last remaining 200mm fab operated by Hynix is to cut memory production and focus on specialty products, according to Hynix. M8 has a monthly capacity of 130,000wspm. Hynix expects 200mm production will make-up approximately 10 percent of its output by early 2009 and equates to a 30 percent reduction in its total manufacturing output.