Online information source for semiconductor professionals
The SiGe:C Epitaxy Process
Popular articles
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
Qimonda starts major reorganization: exits PC DRAM market - 13 October 2008
Micron close to Inotera share purchase, says Gartner - 06 October 2008
Applied Materials sees higher CapEx spending for 2009 - 15 August 2008
JILL C. HILDRETH, JEFFREY A. CHAN, ANDREW S. MORTON & HEATHER KRETZSCHMAR, Motorola Inc., Chandler, AZ, USA
ABSTRACT
To meet the high-frequency demands of today’s wireless market, SiGe:C heterojunction bipolar transistors have grown in popularity. This need for speed has forced the novel process of SiGe:C epitaxy out of the development laboratory and onto the factory floor. Not only must the SiGe:C process meet device and product specifications, but to be cost effective, it must include a process and tool monitoring plan that can be executed around the clock by manufacturing personnel. Described within is a methodology for manufacturing SiGe:C films with industry-leading film quality using a reduced-pressure CVD reactor for deposition. Use of this methodology has enabled Motorola to qualify SiGe:C for production on a 0.35 μm BiCMOS platform.
 |
Please login to download the paper. No account yet? Please register. It's free! |