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Qimonda and Elpida team on sub-40nm DRAM development
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Qimonda AG and Elpida Memory have signed a Memorandum of Understanding
to develop DRAM cell sizes using both Qimonda’s Buried Wordline
technology and Elpida’s advanced stack capacitor technology for the
40nm node and below. The compnaies are targeting 4F² cell concept by
2010 and aim to scale it to the 30nm generation.
“This strategic cooperation with Elpida is a tremendous endorsement of
our innovative Buried Wordline technology,” said Kin Wah Loh, President
and CEO of Qimonda AG. “Qimonda will leverage this partnership to
significantly accelerate the introduction of small 4F² cell sizes. This
technology alignment of two major DRAM innovators creates excellent
opportunities for greater economies of scale in R&D and future
joint manufacturing activities.”
Yukio
Sakamoto, President and CEO of Elpida, said, “Our R&D effort has
given us the lead in DRAM technology. In the tough, competitive
industry that we are in, however, faster and more efficient development
of new process technologies is becoming critically important. We
believe this joint development agreement with Qimonda will further
accelerate and strengthen our technology leadership, putting us on a
path to the top position in the DRAM market.”
The companies
also said they would explore joint development opportunities in the
areas of Through Silicon Via Technology and future memories.