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Home arrow News arrow Materials & Gases arrow IBM teams with BASF for 32nm materials development
IBM teams with BASF for 32nm materials development Print E-mail
Jun 22, 2007 at 02:01 PM
ImageBASF has said that it has entered into an agreement with IBM to jointly develop electronic materials required that could be used in production at the 32nm node as part of its continuing ‘Common Platform' approach with other chip manufacturers in 2010 onwards.

"We are taking a big leap forward to face the future challenges of the IC industry," said Dr. Ralf Fink, Senior Manager BASF Electronic Materials. "The cooperation will benefit from IBM's leading semiconductor process development and BASF's expertise and innovations in chemicals and nanotechnology," he added.  "IBM and BASF believe this project will enable both parties to stay at the leading-edge of the semiconductor industry,"

 "Chemistry will increasingly play an important role in the development of the next generation 32nm IC products," stated Dr. Ronald D. Goldblatt, Distinguished Engineer and Senior Manager, IBM Research.  "BASF will provide an extensive and interdisciplinary background that only a major chemical company can offer, and long years of experience in the field of semiconductor-related chemical solutions."

The research for this project will be carried out jointly at IBM's facilities in Yorktown Heights, U.S.A. and BASF's headquarters in Ludwigshafen, Germany.

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