Product Briefing Outline: Cabot Microelectronics has
claimed a major breakthrough in its CMP technology with the ‘WIN'
platform of tungsten (W) CMP slurries for advanced technology nodes.
The WIN product line is non-hazardous and environmentally friendly as
it is based on hydrogen peroxide technology. The product platform is
composed of two main product classes: ‘WIN W7000' and ‘WIN W7300.'
Problem: As device dimensions shrink for more advanced
applications (e.g. 65nm and beyond), the CMP performance requirements
are becoming more stringent. Today, reducing or even eliminating
Edge-Over-Erosion (EOE) is a major focus in the CMP industry. Very few
studies have been published regarding this phenomenon, which led to a
common myth that the slurry chemistry is the root cause of EOE
formation. Studies at Cabot indicate that EOE formation in tungsten CMP
is driven purely by mechanical effects.
Solution:
WIN W7000 is a high selectivity slurry that is related to its
‘Semi-Sperse' W2000 platform. WIN W7000 includes fumed silica abrasives
and a proprietary etch inhibitor technology that provides improved
performance with a wide over-polish window and substantially reduced
EOE. WIN W7000 has been demonstrated to provide a 70-80 percent
improvement in erosion compared to Semi-Sperse W2000 1:1 diluted.
Coupled with a soft landing step, EOE is substantially eliminated on
300mm CMP process steps. WIN W7300 is a tunable selective slurry based
on hydrogen peroxide technology and made with an ultra-pure colloidal
particle that results in improved planarization, EOE and defectivity
performance. The product has been also been used successfully as a
"buff" on a hard pad using the same platen, according to the company.
Applications: Tungsten CMP processes 45nm and below.
Platform: The
WIN product line is based on hydrogen peroxide technology. W7000 (high
selectivity) and WIN W7300 (tunable low selectivity) are compatible
with Cabot's other W slurries and can also be used as a buff on a hard
pad (same platen).
Availability: May 2007 onwards.