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New development partnership focuses on 10nm e-beam capabilities |
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Jun 11, 2007 at 02:15 PM |
 A trilateral RD&E program between GenISys, JEOL and Cornell University's Nanoscale Science and Technology Facility has been working on improving direct write e-beam data preparation and electron process correction (nano-EPC) technologies for 10nm-range structures.
Findings of the Cornell-JEOL collaboration have enabled upgrades of the GenISys software Layout BEAMER, which now includes an algorithm that corrects printing artifacts of this discrete writing grid. They expect in the future to account for additional machine and process effects.
"The users of e-beam direct write need urgent solutions for advanced data preparation and correction for nanostructure applications. The strong cooperation of the equipment vendor, the user and the software vendor is key for these developments. We are very fortunate to be collaborating with JEOL and Cornell Nanoscale Science and Technology Facility," said Ulrich Hofmann, founder and general manager of GenISys. "These organizations are pioneering the state of the art in nano-fabrication and provide the ideal forum for further development and extension of Layout BEAMER. The high flexibility, responsiveness and unique combination of software and e-beam application knowledge will enable GenISys to deliver the solutions the market is waiting for."
10nm small structures are fabricated with only a few pulses of the electron beam writer, creating a need for better uniformity, consistency and placement, according to the team.
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