WEI-JEN HSIA, WILBUR CATABAY, DUNG-CHING PERNG, & PETER J. WRIGHT, LSI Logic, Santa Clara, CA, USA
LIAM CUNNANE, KNUT BEEKMANN, SIMON MCCLATCHIE & ADRIAN KIERMASZ, Trikon Technologies Ltd, Newport, Gwent, UK

The approach to the integration of low-k materials studied in this article is to use an inorganic material such as silicon dioxide doped with organic components. Embedded and non-embedded integration schemes are described. Electrical data shows that the low-k material performs as well as or better than a standard oxide.

 Flowfill® Technology Low-Dielectric-Constant Materials