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10th Edition: A New CVD Process For Damascene Low k Applications |
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Feb 04, 2005 at 09:35 AM |
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BEN PANG, WAI-FAN YAU, PETER LEE & MEHUL NAIK, Applied Materials Inc., Santa Clara, CA, USA ABSTRACT
A
low dielectric material, "Black Diamond", based on Silicon Dioxide has
been developed. The density of the material and hence the dielectric
constant can be modified by choosing an appropriate terminating
molecular group. It has the added advantage that the properties of
Silicon Dioxide are retained for the device manufacturing processes. It
is produced by conventional CVD and so should be compatible with normal
Fab line operations.
 A New CVD Process For Damascene Low k Applications
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Wafer Processing 
