Will Conley, Mircea Dusa, Robert Socha, National Semiconductor Corp., Santa Clara, CA, USA; Nigel Farrer, Hewlett-Packard Company, ULSI Research Labs, Palo Alto, CA, USA; Hareen Gangala, Cypress Semiconductor, San Jose, CA, USA; Carl Babcock, AMD Corporation, Sunnyvale, CA, USA; Hua-Yu Liu, Numerical Technologies Inc., Santa Clara, CA, USA

Deep-UV lithography using 248 and 193-nm light will likely be the microlithography technology of choice for the manufacture of advanced memory and logic semiconductor devices for the next decade. Since 193nm lithography development has been slow, the extension of 248nm technology to 150nm and beyond is required. Advanced techniques, such as Optical Proximity Correction (OPC) and Phase Shift Masks (PSM) will be needed in order to maintain sufficient process latitude.