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Home arrow Critical Components arrow Edition 32 arrow 32nd Edition: Discussion topic: latest developments in EUV light sources
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32nd Edition: Discussion topic: latest developments in EUV light sources Print E-mail
Dec 20, 2006 at 05:42 PM

Discussion panel contributors include: Dr. Vivek Bakshi, SEMATECH, Austin, Texas, USA, Dr. Martin McCallum, Manager, Advanced Lithography and Technology, Nikon Precision Europe GmbH, & Dr. Vadim Banine, ASML, Veldhoven, The Netherlands

ABSTRACT

Significant improvements in EUV light sources have been made in the last 12 months, resulting in renewed hope that one of several key barriers to the eventual adoption of EUV as the mainstream lithography technology below the 32nm node may be close to being overcome. Development work has been carried out around the world and within key working groups. We asked some of these groups to provide insight into what has been achieved and what is still needed to be done before EUV lithography shows the light of day!

Mark Osborne, Semiconductor Fabtech, Editor-in-Chief

32nd Edition: Discussion topic: latest developments in EUV light sources
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