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Chartered Semiconductor will now collaborate with IBM on 22nm bulk CMOS R&D at IBM’s 300mm fab in East Fishkill, N.Y. The companies had previously partnered on 90nm, 65nm, 45nm and 32nm process development. 

 “This news demonstrates that a long-term collaborative model for semiconductor research and development yields significant opportunities to improve application performance and cost,” said Gary Patton, Vice President, IBM Semiconductor Research & Development Center. “Going forward, it will be material science invention that will improve silicon performance while the collaborative model mitigates the escalating cost of technology and design and improves time to manufacture.”

“Our relationship with IBM and our flexible Common Platform access provides Chartered’s customers an assured process roadmap that leverages IBM’s technology invention in silicon that is first proven in manufacturing at the Albany Nanotechnology Center and then becomes the basis for our joint process integration with our partners,” said Liang-Choo “LC” Hsia, Senior Vice President of technology development at Chartered. “At a time when our customers are just gaining access to the most innovative foundry process in the industry at 32nm, we can now assure them continued customer-centric solutions well into the next decade with 22nm.”

Financial details were not disclosed.