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Intel and Micron migrate MLC NAND to 50nm |
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Apr 25, 2007 at 04:02 PM |
 Intel Corp. and Micron Technology have said that they are now sampling multi-level cell (MLC) NAND flash memory using a 50nm process, which follows on the heels of their single-level cell NAND flash migration to the same node last July.
"In only one year, Micron and Intel have developed the industry's leading NAND flash memory MLC product and aggressively ramped a factory network that is delivering today for our customers," said Micron Chief Operating Officer Mark Durcan. "We're proud of the accomplishments we're achieving with Intel, and we look forward to more milestones in the next year."
"The progress of our joint venture with Micron to develop industry-leading architecture has surpassed our expectations during this first year," said Randy Wilhelm, Intel vice president and general manager, NAND Products Group. "Intel and Micron were the first in the industry to introduce 50nm SLC NAND samples last July, and developing the industry's most advanced 50nm MLC architecture is a further proof point to the strength of this development and manufacturing relationship."
According to the partners, the 16-gigabit (Gb) device has ‘world-class' die and cell size.
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