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Synopsys and NanoGeometry team on OPC modeling |
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Apr 18, 2007 at 04:28 PM |
 Synopsys and NanoGeometry Research have said that they are collaborating on faster, more accurate, optical proximity correction (OPC) modeling for 45nm designs that is intended to improve "manufacturing aware" OPC and reticle enhancement technology (RET) lithography simulation models.
"We believe the accuracy, stability, and time-to-modeling for OPC can be significantly improved by incorporating our wafer pattern data into Proteus modeling," stated Masahiro Yamamoto, CEO, NanoGeometry Research, Inc. "By collaborating with Synopsys, the leader in DFM solutions, we can provide better predictive lithography models for our customers, helping them reduce the time required to develop a lithography process."
"Together, Synopsys and NGR are addressing the escalating need for accurate, high speed OPC modeling at the 45nm node," said Anantha Sethuraman, Synopsys' vice president of marketing, Design for Manufacturing. "By addressing the complex technology issues our customers face at 45nm and beyond, this collaboration will help them achieve their model production and yield goals, thereby reducing their overall cost of ownership."
The interface that Synopsys and NGR are developing will allow Proteus modeling to automatically link to metrology data obtained from NGR's wafer inspection tool
NGR2100.
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