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Jazz Semiconductor offers high-performance 130nm SiGe BiCMOS process |
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Apr 11, 2007 at 04:49 PM |
 Specialty foundry Jazz Semiconductor has launched a new 130nm SiGe BiCMOS process that is intended for high-performance wireless and optical communications applications and is available for prototyping through a Multi-Project Wafer (MPW) Program, the foundry said.
"The Jazz SBC13 process further extends our SiGe technology roadmap and addresses our customers' needs for a high-performance SiGe BiCMOS process by complementing our 200GHz 0.18µm process with a 200GHz process at the 0.13µm node," said Marco Racanelli, vice president of technology and engineering, Jazz Semiconductor. "Our SBC13 offering provides our customers an advantage in both performance and power consumption with the combination of a 200GHz transistor with 1.2V low-power CMOS. This combination is enabling leading edge product design in high-speed wireline, wireless and millimeter-wave applications."
The 130nm process (SBC13) uses a 1.2/3.3V dual gate oxide with the addition of SiGe transistors offering a range of Ft, Fmax, and BVceo for design flexibility, with an Ft up to 200GHz and a separate higher voltage transistor.
The process also supports up to six layers of aluminum metal, a 5.6 fF/µm² linear MIM capacitor, a triple well module, Nwell resistor, MOS varactor, and a low and high value unsilicided poly resistor. The top metal is 3µm thick aluminum to support high-Q inductors, according to Jazz.
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