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V. K. F. CHIA, P. LINDLEY, & M. J. EDGELL, Charles Evans & Associates, Redwood City, CA, USA
S. BISWAS, Evans Europa, London, UK ABSTRACT
Contamination
introduced during semiconductor processing includes transition metals,
mobile ions, carbon, and organics. These contaminants can be deposited
onto the surface of the wafer or they can be energetically driven into
the wafer, to depths of several nanometers. A host of analytical tools
are available to measure these contaminants. Amongst these are magnetic
sector SIMS (secondary ion mass spectrometry), quadruple SIMS, Surface
SIMS (oxygen leak with magnetic sector SIMS), time-of-flight SIMS
(TOFSIMS), total reflection x-ray fluorescence (TXRF), vapour phase
decomposition TXRF (VPD-TXRF), and VPD-atomic absorption (VPD-AA).
In
general, no single analytical technique can provide the answer to every
contamination problem. Specific requirements of each new situation will
often dictate the choice of technique to use. In the analysis of metal
contamination the analytical techniques are well established and
entrenched in product improvement programs. In the analysis of organic
contamination, the choice can be complicated because the effects of
different contaminants are only beginning to be understood.
 A Comparison of Analytical Tools to Monitor Metals and Organic Contaminants
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Wafer Processing 
