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Inotera opens fab 2; planning permission acquired for fab 3 |
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Mar 22, 2007 at 05:56 PM |
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Inotera Memories has officially opened Fab 2 - its second 300mm memory fab in Taoyuan, Taiwan. The new fab has a capacity of over 60,000wspm (wafer starts per month) and is built adjacent to Fab 1 at a cost of over $2 billion when fully equipped.
Inotera expects to have a combined monthly capacity of 120,000wspm by the end of 2007, significantly exceeding Fab 1's ramp rate, which was one of the fastest of any 300mm facility to date. The Company expects that total bit output will increase by at least 70 percent this year. Initial production will be at the 90nm node with 75/70nm technology migration planned for the 4th quarter of 2007. Fab 2 had its groundbreaking in May of 2005 and started its equipment move-in and installation in mid-October of 2006, two weeks ahead of the original schedule, according to Inotera. Inotera has also received approval from Taoyuan County Government to purchase land for building its third 300mm facility, though the company did not state when construction would begin.
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