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11th Edition: Thermally Driven Recrystallisation of Electroplated Copper |
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Feb 03, 2005 at 04:12 PM |
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LYNDON GRAHAM & TOM RITZDORF, Semitool, Kalispell, MT, USA
DAVE CLARKE, STEAG RTP Systems, San Jose, CA, USA
RANDHIR THAKUR, STEAG Electronic Systems, San Jose, CA, USA ABSTRACT
Electrochemically
deposited (ECD) copper films are studied for response to room
temperature selfannealing and rapid thermal annealing (RTA) in a
tungsten-halogen lamp based, rapid thermal processor. It is
demonstrated that 1.3µm thick copper films with 0.25µm single damascene
trench lines can be driven to recrystallise at a process temperature of
250ºC and time of 30 seconds as evidenced by post anneal grain growth.
However, room temperature annealed (selfannealed) 0.25µm trenches did
not fully recrystallise after one week although 0.75µm trenches and the
bulk film has recrystallised.
 Thermally Driven Recrystallisation of Electroplated Copper
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Wafer Processing 