|
EUV source for resist outgassing study |
|
|
|
Feb 28, 2007 at 04:47 PM |
 Energetiq Technology's EQ-10 extreme ultraviolet (EUV) light source is being used on a new experimental tool developed by CEA-Leti in studies to characterize photoresist outgassing during exposure in EUV lithography processes. The 10W EUV source uses Energetiq's patented Electrodeless Z-Pinch technology.
CEA-Leti, operated by the Technology Research Directorate of the French Atomic Energy Commission (CEA), has been pioneering research on EUV lithography since 1999.
"The collaboration with Energetiq has allowed us to set up an outgassing tool which is essential for resist qualification and optic contamination studies and strengthens our capacity to support our collaborative programs with resists and materials suppliers," comments Dr Serge Tedesco, lithography program manager at CEA-Leti. "Moreover, this system is of prime importance in the development of new resist platforms foreseen for the 22nm high performance node."
Using inert Xenon gas, the compact EQ-10 creates a small bright EUV emitting plasma, which produces enough EUV power for photoresist outgassing studies.
EUV lithography is a leading candidate for next generation lithography because of its capability of printing features of 32nm and below, covering the needs of the semiconductor industry into the next decade.
Energetiq's EQ-10 light source employs a patented electrode-free technology that inductively couples the current into the discharge plasma, making it extremely stable and controllable. The plasma is confined away from source components, minimizing heat load and reducing debris.
The company's products cover the deep ultraviolet (DUV), extreme ultraviolet (EUV) and soft x-ray (SXR) wavelength range from 400nm to 1nm (nanometer) and can be used in lithography, metrology, inspection, resist and thin-film processing and R&D applications.
By Dr Mike Cooke
|
Lithography 
