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11th Edition: PVD Copper Barrier/Seed Processes: Some Considerations for the 0.15 µm and Beyond |
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Feb 03, 2005 at 04:05 PM |
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GREG HERDT, ALLEN MCTEER & SCOTT MEIKLE, Micron Technology, Inc., Boise, ID, USA ABSTRACT
The
transition from aluminium to copper interconnect technology is a key
element of the current revolution in back-end of the line (BEOL)
technology [1,2]. Considerations related to the implementation of PVD
Cu barrier/seed processes are an integral part of this transition
process. Development of manufacturable, cost-effective, and extendable
PVD barrier/seed processes requires that integration with attendant
BEOL processes be built-in from the start. This paperpresents some
general issues that should be considered in developing PVD Cu
barrier/seed processes that will be compatible with the requirements of
the 0.15 µm generation and beyond.
 PVD Copper Barrier/Seed Processes: Some Considerations for the 0.15 µm Generation and Beyond
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Wafer Processing 