Monique Ercken, Mireille Maenhoudt & Mieke Van Bavel*, IMEC, Leuven, Belgium  (*scientific editor)

ABSTRACT

Lithography experts, IC manufacturers, tool and material suppliers are moving full speed ahead to bring immersion lithography into production for the 45nm technology node.  However, both resist leaching and immersion related defectivity remain a source of concern.  For the latter, a fundamental understanding of the sources and mechanisms involving defect formation is highly demanded.  Recently, great progress has been achieved in the understanding and mitigation of both scanner- and material-related immersion defectivities.  In addition, resist leaching has been characterized in more detail and the pros and cons of using a top coat to mitigate leaching have been evaluated.  The challenges in these areas that remain to be solved before bringing immersion into mass production have been identified.