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Home arrow Cleanroom arrow Articles arrow Edition 11 arrow 11th Edition: Improving Processes Through RF Power Control
11th Edition: Improving Processes Through RF Power Control Print E-mail
Jan 03, 2000 at 03:28 PM
Carl Almgren, Jim Evans & Randy Heckman, Advanced Energy Industries, Inc., Fort Collins, CO, USA

ABSTRACT

Plasma-based processes are critical to the fabrication of semiconductor device structures and to the integrity of CDs. PVD, HD-PCVD, PECVD, dry etch, and strip all rely on dc and RF sources to ignite and maintain the energy of the plasma to do work. There are multiple methodologies available to deliver power to the plasma, using fixed match, switch match, auto-selectable switch match, and sweep frequency. Further, these methods are very amenable to point-of-use delivered power control. This paper focuses on the benefits to be derived from two of these methods: fixed match and closed-loop delivered power control. 

Improving Processes Through RF Power Control Figure 1 Experimental configuration
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