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12th Edition: Post-CMP Cleaning of Thermal-Oxide Wafers |
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Feb 03, 2005 at 02:05 PM |
AHMED A. BUSNAINA & NAIM MOUMEN,Clarkson University, Potsdam, NY, USA
ABSTRACT
Post-CMP
cleaning of polished thermal-oxide wafers was conducted using megasonic
and brush cleaning techniques. The wafers were polished using a Rodel
silica-based slurry. The results achieved by the two different cleaning
methods are presented and compared. The results show that although the
two techniques produce comparable cleaning performance, non-contact
cleaning using SC1 chemistry produces lower defect counts on the
cleaned wafers.
 Post-CMP Cleaning of Thermal-Oxide Wafers
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Wafer Processing 
