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12th Edition: Control of Damascene Copper Processes by Cyclic Voltammetric stripping |
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Feb 03, 2005 at 02:01 PM |
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PETER BRATIN, GENE CHALYT, ALEX KOGAN, MICHAEL PAVLOV & JAMES PERPICH,
ECI Technology, Inc,. East Rutherford, NJ, USA ABSTRACT
Use
of electroplated copper for on-chip metallisation in semiconductor
devices is gaining momentum because of low cost and high throughput of
the process. Electroplated trenches and vias with submicron dimensions,
however, are strongly affected by changes in the composition of the
plating solution, thereby creating a high demand for control
techniques. The most dynamic ingredients of electroplating solutions
are organic additives.
Even a small imbalance between the components of
the additive system can cause various defects in the filling of the
trenches and vias, as well as changes in the properties of the
electroplated copper. The cyclic voltammetric stripping (CVS) technique
became the de-facto standard for monitoring of additives in the PWB
manufacturing. The CVS technique is now quickly becoming a technique of
choice for monitoring the Damascene copper deposition solutions used
for wafer processing as well.
 Control of Damascene Copper Processes by Cyclic Voltammetric stripping
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Wafer Processing 