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PETER BRATIN, GENE CHALYT, ALEX KOGAN, MICHAEL PAVLOV & JAMES PERPICH,
ECI Technology, Inc,. East Rutherford, NJ, USA

ABSTRACT

Use of electroplated copper for on-chip metallisation in semiconductor devices is gaining momentum because of low cost and high throughput of the process. Electroplated trenches and vias with submicron dimensions, however, are strongly affected by changes in the composition of the plating solution, thereby creating a high demand for control techniques. The most dynamic ingredients of electroplating solutions are organic additives. Even a small imbalance between the components of the additive system can cause various defects in the filling of the trenches and vias, as well as changes in the properties of the electroplated copper. The cyclic voltammetric stripping (CVS) technique became the de-facto standard for monitoring of additives in the PWB manufacturing. The CVS technique is now quickly becoming a technique of choice for monitoring the Damascene copper deposition solutions used for wafer processing as well.