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12th Edition: A Novel Oxazole Based Low k Dielectric Addresses Copper Damascene Needs |
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Feb 03, 2005 at 12:07 PM |
G. SCHMID, R. SEZI, K. LOWACK, & W. RADLIK, Infineon Technologies, Munich, Germany
ABSTRACT
A
new polymer based low k interlayer dielectric (ILD) material has been
developed for application in high performance integrated circuits. The
spin-on polymer named OxD provides superior adhesion and processing
stability combined with excellent planarisation and gap-fill
properties. OxD is fully compatible with existing CMOS technologies
including Cu damascene or Al metallisation schemes. Due to its
mechanical strength, OxD can easily withstand chemical mechanical
polishing in particular.
 A Novel Oxazole Based Low k Dielectric Addresses Copper Damascene Needs
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Wafer Processing 